Chenmu Zhang

Abstract

Two-dimensional (2D) semiconductors have demonstrated great potential for next-generation electronics and optoelectronics. However, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which significantly limits its applications. Here we discover a number of new 2D semiconductors with mobility one order of magnitude higher than the current ones. The discovery is made by formulating effective descriptors, applying them to computationally screen the 2D materials database, then using state-of-the-art first principles method to accurately calculate the mobility. Further analyses attribute their high mobilities to small effective mass, high sound velocity, high phonon frequency, small ratio of Born charge vs. polarizability, and/or weak electron-phonon coupling. Our work opens up new materials promising for electronic/optoelectronic applications, and improves the fundamental understanding of the transport mechanism.